MOSFET offers low on resistance at high operating temperatures
characteristics between RDS(ON) and Ciss, as well as improving switching speeds and minimising radiated noise. This process, combined with the proprietary ‘WARP’ technology used in the DPAK+ package, allows the TK100S04N1L to offer a typical RDS(ON) of just 1.9mΩ. At 2.4mΩ, the device has a maximum RDS(ON) 22% lower than previous devices with the same ratings.
While offering the same form factor as, and pin-to-pin compatibility with, a traditional DPAK package, DPAK+ replaces conventional internal aluminium bond wires with copper clamps.
This highly reliable mechanical connection is capable of withstanding repeated power cycling and exposure to shock and vibration. In addition, the large, cross-sectional area combined with improved electrical connectivity minimises heating due to package losses and reduces package inductance. This, in turn, lowers thermal losses and noise while supporting faster device operation.
The TK100S04N1L has a maximum channel-to-case thermal resistance of 1.5°C/W and can handle a maximum pulse drain current up to 200A. Drain power dissipation at 25°C is rated at 100W while maximum leakage current (@ VDS = 40V) is an ultra-low 10μA.
Following the introduction of the new 40V device, Toshiba plans to launch 60V and 100V automotive MOSFETs built around the same process and packaging technologies.
For more information visit https://www.toshiba-components.com
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