MOSFETs in DFN1212-3 package replaces SOT723 alternatives
Occupying the exact same 1.44mm2 printed circuit board area and with the same low profile 0.5-mm off-board height as the less thermally efficient SOT723 packaged MOSFETs, these leadless DFN1212-3 packaged alternatives are drop-in replacements for high reliability signal and load-switching applications in a broad range of high portability consumer electronics products including digital cameras, tablet PCs and smartphones.
The MOSFET pair initially released by Diodes Incorporated are 20 V rated and comprise the DMN2300UFD N-channel and the DMP21D0UFD P-channel parts. Helping to reduce conduction losses and power dissipation, the N-channel
MOSFET presents a typical RDS(ON) of just 400 mΩ at VGS of 1.8 V, which is approximately 50% lower than the most popular SOT723 packaged alternatives.
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