MOSFETs in LFPAK56 and LFPAK33 optimise safe operating area, drain current and gate charge
Very low RDS(on) is required by many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA – a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches.
With a maximum RDS(on) of 0.67 mΩ, the NextPower S3 PSMNR58-30YLH MOSFET improves the maximum drain current rating up to 380A Nexperia’s Trench 11. This parameter is especially important in motor control applications where motor-stall can result in very high current surges for short periods, which the MOSFET must withstand for safe and reliable operation. Some suppliers provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380 amps, and 100% final production test at up to 190A.
Devices are offered in LFPAK56 (Power-SO8) and LFPAK33 (Power33), both offering unique copper-clip construction which absorbs thermal stresses, increasing quality & reliability. The PSMNR58-30YLH is housed in LFPAK56, Nexperia’s 4-pin Power-SO8 with a footprint of 30 mm2 and a pitch of just 1.27 mm.
“The combination of our unique NextPowerS3 superjunction technology and the LFPAK package has enabled Nexperia to deliver low RDS(on) MOSFETs with a high ID(max) rating that do not compromise the SOA rating, quality or reliability,” said Steven Waterhouse, product manager for Power MOSFETs at Nexperia. “This makes the new parts uniquely positioned for high performance, high reliability and fault-tolerant applications.”
Applications include brushless DC (BLDC) motor control (full bridge, 3-Phase topologies); server power for ORing, hotswap operation and synchronous rectification; battery protection; mobile fast-charge and DC load switch.
efficiencywins.nexperia.com/efficient-products/seeking-the-perfect-power-switch.html
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