MOSFETs target portable power and USB Type-C designs
The SSM6L61NU and SSM6N61NU are housed in compact SOT-1118 (UDFN6) packages, feature excellent heat dissipation and low drain-source ON-resistance of 25 mΩ (typ) [@N-ch, VGS=4.5 V]. This makes them suitable for use as power management switches and DC-DC converters in smartphones and tablets as well as in battery management applications and for load switching in applications with USB Type-C interfaces.
The low N-channel RDS(ON) of 25 mΩ means the MOSFETS have reduced power loss in power supplies and extend the operation time of battery-driven devices. The SSM6L61NU is a complementary device and the SSM6N61NU is a dual N-channel device. When used in applications with USB Type-C interfaces the SSM6L61NU and SSM6N61NU can be placed between the Vout (output voltage) from the power management IC and system-on-a-chip (SoC), or in other parts of the circuitry.
A small package, measuring just 2mm x 2mm, improves the power dissipation rating (PD=1 W) and reduces the footprint of the MOSFETs by 50 percent, when compared with those housed in a PS-8 package.
www.toshiba.semicon-storage.com
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