MOSFETs with fast recovery diodes boost converter power
The MDmesh DK5 power MOSFETs help designers boost the efficiency of power-conversion topologies such as resonant converters with Zero-Voltage Switching (ZVS).
With voltage ratings from 950V to 1050V the super-junction MOSFETs have higher switching performance with lower RDSon on-resistance and higher current rating per die area than ordinary planar MOSFETs. This allows designers to increase power density by using fewer parallel components in converters for high-power equipment such as telecom and data-centre servers powered from high bus voltages. This also helps reduce the size of converters for industrial welders, plasma generators, high-frequency induction heaters and X-ray machines.
With the fast-recovery body diode, the new devices enable higher efficiency in ZVS LLC resonant converters, which are chosen for applications that require high efficiency over a wide input-voltage range. Other types of bridged converters, as well as boost DC-DC converters for battery charging, also benefit from the reduced losses and enhanced dynamic performance of these devices. Compared with currently available VHV fast-diode MOSFETs, the DK5 devices from ST combine the best reverse-recovery time (trr) and lowest MOSFET gate charge (Qg) and RDSon, with the favourable output and input capacitances (Coss, Ciss) of a super-junction device.
The DK5 family extends ST’s VHV super-junction portfolio, which includes devices from 800V to 1500V, adding six new parts in TO-247, TO-247 Long-Lead, Max247, and ISOTOP power packages. Volume production has already started for the STWA40N95DK5, STY50N105DK5, and STW40N95DK5, with prices starting from $8.85 for orders of 1000 pieces.
For more information visit www.st.com/mdmeshdk5
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