Moving from magnetic random access memory to magnetic logic units
Feature articles
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By
eeNews Europe
The key attributes of MRAM are its non-volatility, its low voltage operation, an unlimited read and write endurance, fast read and write operation and ease of integration as back-end technology. These characteristics give MRAM the potential to replace many types of memory in various applications.
Read the full article on page 34 of our February digital edition.
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