MXene, a new dream material!
KIST researchers develop analysis model using magnetic transport characteristics of molecules attached to the surface of MXene
Developed in 2011, MXene is a two-dimensional nanomaterial with alternating metal and carbon layers, which has high electrical conductivity and can be combined with various metal compounds, making it a material that can be utilized in various industries such as semiconductors, electronic devices, and sensors. To properly utilize MXene, it is important to know the type and amount of molecules covered on the surface, and if the molecules covered on the surface are fluorine, the electrical conductivity of decreases and the efficiency of electromagnetic wave shielding decreases. However, since it is only 1 nm (nanometer – billionth of a meter) thick, it takes several days to analyze the molecules on the surface even with a high-performance electron microscope, so mass production has been impossible until now.
The research team led by Seung-Cheol Lee, director of the Indo-Korea Science and Technology Center(IKST) at the Korea Institute of Science and Technology(KIST), has developed a method to predict the distribution of molecules on the surface using the magnetoresistance property of MXene. By utilizing this method, it is possible to measure the molecular distribution of MXene with a simple measurement, enabling quality control in the production process, which is expected to open the way to mass production that was not possible until now.
The research team developed a two-dimensional material property prediction program based on the idea that electrical conductivity or magnetic properties change depending on the molecules attached to the surface. As a result, they calculated the magnetic transport properties of MXene and succeeded in analyzing the type and amount of molecules adsorbed on the surface of MXene at atmospheric pressure and room temperature without any additional devices.
The Hall scattering coefficient has different applications based on the value of 1. If the value is lower than 1, it can be applied to high-performance transistors, high-frequency generators, high-efficiency sensors, and photodetectors, and if the value is higher than 1, it can be applied to thermoelectric materials and magnetic sensors. Considering that the size of the maxin is a few nanometers or less, the size of the applicable device and the amount of power required can be dramatically reduced.
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