N-Channel and P-Channel power MOSFETs feature on-resistance ratings down to 1.2 V in chipscale package
The Si8802DB and Si8805EDB will be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The MOSFETs’ ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.
The devices released today feature low on-resistance at 1.5 V with the added benefit of on-resistance specified with a gate drive of 1.2 V. This simplifies designs by allowing the MOSFETs to work with the low-voltage power rails common in handheld devices, eliminating an extra resistor and voltage source for p-channel load switching, and providing longer battery operation between charges in n-channel load switching.
The n-channel Si8802DB offers on-resistance of 54 mΩ at 4.5 V, 60 mΩ at 2.5 V, 68 mΩ at 1.8 V, 86 mΩ at 1.5 V, and 135 mΩ at 1.2 V. While the device’s package outline is 36 % smaller than the next smallest device, its on-resistance values at 1.8 V and 1.5 V are 5.5 % and 7.5 % lower, respectively.
The p-channel Si8805EDB features on-resistance of 68 mΩ at 4.5 V, 88 mΩ at 2.5 V, 155 mΩ at 1.5 V, and 290 mΩ at 1.2 V. While occupying 29 % less board space than the next smallest p-channel device, its on-resistance values at 4.5 V and 2.5 V are still 17 % and 8 % lower, respectively. The lower on-resistance of the Si8802DB and Si8805EDB minimize voltage drops across the load switch to prevent unwanted under-voltage lockout.
The devices are halogen-free in accordance with the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. The Si8805EDB offers ESD protection of 1500 V.
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