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Nanya breaks ground on double-decker wafer fab

Nanya breaks ground on double-decker wafer fab

Business news |
By Peter Clarke



Taiwan’s leading DRAM maker Nanya Technology Corp. has broken ground on its next wafer fab in New Taipei City. Nanya plans to spend about NT$300 billion (about US$10 billion) to build a large capacity fab with a double-deck clean room.

Besides the main fab the site will include an R&D centre and a water recycling centre (see Taiwan imposes water rationing two days a week). An independent building with extreme ultraviolet (EUV) lithography equipment will be also established for future advanced process.

The fab will be used by Nanya to implement generations of self-developed 10-to-19nm process technologies (1A, 1B, 1C, 1D) and adapt artificial intelligence to manufacturing. The construction is scheduled to be completed by 2025, to provide manufacturing capacity of 45,000 wafer starts per month and employ 3,000 people.

President attends

The ground breaking was attended by Taiwan’s President Tsai Ing-wen and Mayor Yu-Ih Hou of New Taipei City.

“DRAM is a critical component in the smart era. It is important to keep the proprietary technology in Taiwan,” said  Formosa Plastic Group’s Chairman, WenYuan Wong

 “Volume production of the first generation of the 10nm-class technology process (1Anm) is expected in 2022, meanwhile the second generation (1Bnm) has begun trial production. The third generation (1Cnm) and EUV technology for the fourth generation (1Dnm) are now under development,” said Nanya Technology’s Chairman, Chia-Chau Wu.

Related links and articles:

www.nanya.com

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