Navitas adds PLECS Models for GeneSiC trench semiconductors

Navitas adds PLECS Models for GeneSiC trench semiconductors

Business news |
By Nick Flaherty

Navitas Semiconductor has teamed up with Plexim in Zurich on thermal loss models of its GeneSiC G3 trench silicon carbide MOSFET and Gen 5 MPS diodes.

The PLECS thermal loss models allow highly-accurate simulations of complete power electronics systems with both soft- and hard-switching applications.

The proprietary GeneSiC trench-assisted planar-gate MOSFET technology delivers the lowest RDS(ON) at high temperature and the highest efficiency at high speeds, and new MPS diodes with ‘low-knee’ characteristics drive unprecedented, industry-leading levels of performance, robustness and quality.

“Accurate, empirically-based simulation models maximize the chance of first-time-accurate designs, accelerating time-to-market and time-to-revenue,” noted Dr. Ranbir Singh, Navitas EVP for the GeneSiC business line. “For the power designer, understanding the leading-edge performance of GeneSiC MOSFETs and MPS diodes with detailed device characteristics, plus power, efficiency and thermal analysis is a critical competitive advantage.”

“The intuitive and highly-efficient PLECS lookup-table based approach to simulating thermal semiconductor losses in complex power electronic circuits is key,” said Kristofer Eberle, Plexim, North America. “Unlike legacy modeling approaches that are not well-suited to new wide bandgap materials, PLECS uses a simplified, but accurate behavioral description to highlight the superior performance of the GeneSiC MOSFETs.”

PLECS models for GeneSiC MOSFETs and MPS diodes are available today via;


If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles