Navitas combines GaN and SiC for data centre AI power
Navitas is releasing a 4.5kW platform enabled by a combination of GaN and SiC to push densities over 130W/in3 and efficiencies over 97% and looking to a platform that can provide up to 10kW to power AI data centre chips.
The combined GaN and SiC designs from Navitas are being evaluated by over 20 data centre customer projects for AI power.
High-performance AI processors such as Nvidia’s ‘Grace Hopper’ H100 CPU and GPU uses 700W, with next-generation B100 andB200 chips anticipated to increase to 1,000W or more by next year.
In August, Navitas introduced a 3.2kW data centre power platform using GaN enabling over 100W/in3 and over 96.5% efficiency (see 3.2kW GaN reference design for data centre AI power). It now has plans for an 8-10kW power platform by the end of 2024 to support 2025 AI power requirements.
The platform will use both GaN and SiC technologies and further advances in architecture to set all-new industry standards in power density, efficiency and time-to-market. Navitas is already engaged with major data-center customers, with full platform launch anticipated in Q4 ’24, completing this 3x increase in power demands in only 12-18 months.
System designs include complete design collateral with fully-tested hardware, schematics, bill-of-materials, layout, simulation and hardware test results to maximize first-time-right designs and fast revenue generation.
“The rapid development and deployment of artificial intelligence (AI) into global data centers has created a dramatic and unexpected power challenge for our entire industry,” said Gene Sheridan, Navitas’ CEO and Co-Founder. “Our investment in leading-edge GaN and SiC technologies, combined with our unique data-center design center capabilities, have positioned us well. Our team has really stepped up to the challenge, with a 3x power increase in less than 18 months.”
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