Navitas enters high power SiC module market
Navitas is aiming to take on power industry giants Mitsubishi Electric and Infineon Technologies with high power silicon carbide (SiC) modules and bare die.
Target applications cover centralized and string solar inverters, energy storage systems (ESS), industrial motion, electric vehicle (EV) on-board chargers, EV roadside fast chargers, wind energy, UPS, bi-directional microgrids, DC-DC converters, and solid-state circuit breakers.
The SiCPAK modules use the popular press-fit packaging with the Navitas GeneSiC trench-assisted planar-gate SiC MOSFET die. The initial release will include 1,200 V-rated half-bridge modules in 6, 12, 20, and 30mOhm ratings.
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Within the lead-free SiCPAK, each SiC chip is silver (Ag) sintered to the module’s substrate for superior cooling and reliability. The substrate uses direct-bonded copper (DBC) and manufactured using an active-metal brazing (AMB) technique on silicon-nitride (Si3N4) ceramics to boost the power-cycling performance, fracture resistance and thermal conductivity.
Navitas is also offering bare die of the MOSFETs and MPS diodes to customers who prefer to make their own high-power modules, all with gold (Au) and aluminium (Al) top-side metallization.
Despite being a pioneer in gallium nitride (GaN) technology, the company already has a range of SiC devices in discrete packages from 8×8 mm surface-mount QFNs to through-hole TO-247 following its acquisition of GeneSiC last August.
“Navitas will enable customers to accelerate the transition from fossil fuels, and legacy silicon power products to new, renewable energy sources and next-generation semiconductors, with more powerful, more efficient, faster-charging systems,” said Dr. Ranbir Singh, Navitas EVP for SiC at the PICM Europe 2023 show.
Parts are available now to qualified customers. www.navitassemi.com
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