Navitas qualifies Fast SiC for automotive
Navitas Semiconductor has qualified its third-generation silicon carbide (SiC) MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages for automotive designs.
The proprietary trench-assisted planar technology developed by GeneSiC emables case temperatures up to 25°C lower than conventional devices and an operating life up to 3x longer than alternative SiC products, for high-stress EV environments.
The AECQ101 qualified SiC MOSFETs provide higher power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas’ dedicated EV Design Centre has demonstrated leading edge OBC system solutions up to 22 kW with 3.5 kW/litre power density, and over 95.5% efficiency.
400 V-rated EV battery architectures are served by the new 650 V Gen-3 Fast MOSFETs featuring RDS(ON) ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800 V systems.
Both 650 and 1,200 V ranges are AEC Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package. For 400 V EVs, the 650 V-rated, surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the D2PAK-7L. This enables very high-power density solutions, while minimal package inductance of only 2 nH ensures excellent fast-switching performance and lowest dynamic package losses.
The automotive-qualified 650 V and 1200 V G3F SiC MOSFET family in D2PAK-7L and TOLL surface mount packages are released and available immediately.
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
