‘New class’ of 650V IGBTs cuts switching losses over 50 Hz to 20 kHz
Applications can typically be found in uninterruptible power supplies (UPSs) as well as in inverters for photovoltaic and welding systems. The L5 family is based on Infineon’s TRENCHSTOP 5 thin wafer technology, with the intrinsically low conduction losses having been reduced further with additional optimisation of the carrier profile.
With a typical VCE(sat) value at 25°C of 1.05V, new levels of efficiency can be reached – up to 0.1% efficiency improvement in a NPC 1 topology or up to 0.3% efficiency improvement in a NPC 2 topology when replacing predecessor TRENCHSTOP IGBTs with the L5 family. Coupled with the positive temperature coefficient of VCE(sat), high efficiency is maintained plus paralleling is straightforward – claimed as benchmark for IGBTs switching below 20 kHz frequency. The TRENCHSTOP 5 technology base used for the new L5 family not only delivers unmatched low conduction losses, but total switching losses are as low as 1.6 mJ at 25°C. Benefits include higher efficiency, improved reliability and smaller dimensions of systems in low switching frequency applications.
The new L5 IGBT family is released in a first wave using the industry standard TO-247 3-pin package. Additionally, for applications requiring extended efficiency enhancement, Infineon also offers the L5 in the TO-247 4-pin Kelvin-Emitter package. When compared to the standard TO-247 3pin package, the TO-247 4pin package provides a further 20% reduction in switching losses. Infineon says the L5 in combination with the TO-247 4-pin package provides the ultimate lowest conduction and switching losses.
The new low VCE(sat) L5 family is available in 30A and 75A current classes as single IGBT and co-packed with Infineon’s ultrafast Rapid 1 and Rapid 2 silicon diodes. The TO-247 4-pin Kelvin-Emitter package will be available in 75A current class.
Infineon; www.infineon.com/Trenchstop-L5
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