New family of high speed 600-V discrete IGBTs feature low saturation voltage
All AP20GT60 family IGBTs feature a collector/emitter voltage rating, VCEs, of 600 V, a peak gate emitter voltage rating, VGE, of ±20 V, and a very low saturation voltage.
AP20GT60P-HF-3 benefits from a typical saturation voltage, VCE(sat), of 1.8 V at Ic=20 A, a maximum power dissipation at 25 degC of 104 W, and comes in a fully RoHS-compliant and halogen-free TO-220 package. AP20GT60ASP-HF-3 (with internal diode) has a typical saturation voltage of 1.7 V at Ic=19 A, a maximum power dissipation at 25 degC of 78 W, a diode forward current rating of 8 A, and a diode pulse forward current rating of 40 A. It comes in a fully RoHS-compliant and halogen-free TO-220 package.
Featuring a saturation voltage of 1.8 V at Ic=20 A and a maximum power dissipation at 25 degC of 25 W, the AP20GT60I-HF-3 device comes in a fully RoHS-compliant halogen-free TO-220CFM insulated package. The corresponding AP20GT60ASI-HF-3 IGBT with internal diode has a typical saturation voltage of 1.7 V at Ic=12 A, a maximum power dissipation at 25 degC of 33 W, a diode forward current rating of 8 A, and a diode pulse forward current rating of 40 A . The device comes in a fully RoHS-compliant halogen-free TO-220CFM insulated package.
AP20GT60W-HF-3 is in the fully RoHS-compliant halogen-free TO-3P allowing maximum power dissipation at 25degC of 125 W. It also benefits from a typical saturation voltage of 1.8 V at Ic=20 A. The equivalent AP20GT60SW-HF-3 device has the built-in fast recovery diode, with a diode forward current rating of 40 A, and a typical saturation voltage of 1.8 V at Ic=20 A. Maximum power dissipation at 25 degC is also 125 W in a fully RoHS-compliant halogen-free TO-3P package.
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