GaN FET enables higher voltage satellite power
EPC Space has launched the EPC7030MSH, a 300-V radiation-hardened GaN FET. The solution delivers a high power current rating, setting a new benchmark for satellite power and propulsion applications.
EPC7030MSH
As satellite manufacturers transition to higher voltage power buses and more demanding power densities, EPC Space’s latest GaN device addresses a growing need for compact, efficient, and rad-hard power conversion. The EPC7030MSH is engineered for front-end DC-DC converters and electric propulsion systems operating under extreme radiation and thermal conditions.
Documentation indicates the part is rated for 300 V operation at a linear energy transfer (LET) of 63 MeV, and 250 V at LET = 84.6 MeV. It delivers the lowest RDS(on) and gate charge (QG) of any 300 V radiation-hardened GaN FET on the market today, according to the company.
“The EPC7030MSH 300 V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers,” said Bel Lazar, CEO of EPC Space, in a release.
The new EPC Space device is packaged in a hermetic surface-mount FSMD-M format, designed for conduction cooling and increased creepage distance. It is also compatible with existing GaN gate drivers, easing system integration for space-qualified designs.
Target applications include front-end DC-DC converters in satellite power systems, higher-voltage power distribution buses, and electric propulsion systems requiring efficient, compact switching.
GaN for Space
As we’ve reported, Gallium nitride (GaN) is a wide-bandgap semiconductor that outperforms traditional silicon in several key ways — it switches faster, operates more efficiently, and has lower power losses. Advantages are especially important in space applications, where systems must be extremely power-dense, tolerate harsh thermal conditions, and withstand radiation exposure. That’s where GaN excels. The material enables lighter, more efficient designs while reducing the burden of thermal management, which is a major benefit for satellite power systems, aerospace propulsion electronics, and power distribution networks. In short, GaN helps engineers address some of the toughest challenges in space: minimizing weight, maximizing efficiency, and improving reliability.
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