New GaN FET offers high frequency switching with enhanced performance
The EPC2012 FET is a 1.6 mm 2200 VDS device with a maximum RDS(ON) of 100 milliohms with 5 V applied to the gate. The eGaN FET provides performance advantages compared with the first-generation EPC1012 eGaN device. The EPC2012 has an increased pulsed current rating of 15 A (compared with 12 A for the EPC1012), is fully enhanced at a lower gate voltage, and has superior dv/dt immunity due to an improved ratio of QGD/QGS.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2012 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
In 1k piece quantities, the EPC2012 is priced at $2.10 and is immediately available through Digi-Key Corporation at https://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
For an application of the EPC2012eGaN visit:
https://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf
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