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New research lab fathoms out GaN potential for power, lighting devices

New research lab fathoms out GaN potential for power, lighting devices

Technology News |
By eeNews Europe



In the new Gallium Nitride Center Saxony, researchers of Namlab and of Compound Materials will collaborate closely with further partners such as the Freiberg mining university. The close collaboration will ensure that the research results can be industrialized quickly.

Main research topics include the properties of GaN as a future semiconducting material for LEDs, lasers and power devices. GaN emits an intensively blue light. Deposited on carrier materials such as sapphire and enriched by fluorescent layers, GaN is used today in white LEDs. The Saxon researchers intend to go one step further in that they develop free-standing GaN wafers without carrier material. Such wafers could be interesting for the production of Laser sources. What’s more, they enable the design of innovative power devices, said Thomas Mikolajick, scientific director of NamLab. With their specifi set of properties, such devices would be ideal for use in solar and wind energy, smart grids and electromobility.

The new laboratory has been funded in part by the German research ministry and the Saxon state government.

For more information visit www.namlab.com

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