Nexperia launches e-mode GAN FETs

Nexperia launches e-mode GAN FETs

New Products |
By Nick Flaherty

Nexperia has developed a range of GaN FETs using an enhancement mode (e-mode) configuration for low (100/150 V) and high (650 V) voltage applications.

The range of seven devices adds to the existing cascode GaN devices, making Nexperia the only supplier with both technologies.

The portfolio launched at PCIM Europe 2023 this week includes five 650 V rated e-mode GaN FETs (with RDS(on) values between 80 mΩ and 190 mΩ) in a choice of DFN 5×6 mm and DFN 8×8 mm packages. They improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power.

Nexperia also has a 100 V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150 V (7 mΩ) device in a FCLGA package. These devices are suitable for various low-voltage (<150 V), high-power applications to deliver, for example, more efficient DC-DC converters in data centres, faster charging (e-mobility and USB-C), smaller LiDAR transceivers, lower noise class D audio amplifiers and more power dense consumer devices like mobile phones, laptops, and games consoles.

The e-mode GaN FETs are fabricated on a 200mm wafer-line for increased capacity and qualified for industrial applications according to JEDEC standard.

This allows Nexperia to supply cascode devices for high-voltage, high-power applications, 650 V e-mode devices for high-voltage, low-power applications and 100/150 V e-mode devices for low-voltage, high-power applications.

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