Nexperia taps Mitsubishi Electric for SiC power
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Nexperia has signed a strategic deal with Mitsubishi Electric to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market.
Mitsubishi Electric will develop and supply SiC MOSFET chips for Nexperia to use to develop SiC discrete devices.
Mitsubishi has previously signed a deal with Coherent to supply SiC wafers for Mitsubihi MOSFETs, and the company is building a 200mm SiC fab and assembly plant to capitalise on its position in the SiC power market
- Mitsubishi to use Coherent SiC for its $1bn 200mm wafer
- Mitsubishi to build 200mm SiC fab, assembly plant .
The electric vehicle market is expanding worldwide and is helping to drive the exponential growth of SiC power semiconductors, which offer lower energy loss, higher operating temperatures and faster switching speeds than conventional silicon power semiconductors. The high efficiency of SiC power semiconductors is expected to contribute significantly to global decarbonization and green transformation.
Mitsubishi Electric has established leading positions in applications such as high-speed trains, high-voltage industrial applications and home appliances, launching the world’s first SiC power modules for air conditioners in 2010 and became the first supplier of an all-SiC power module for Shinkansen bullet trains in 2015.
www.MitsubishiElectric.com; www.nexperia.com
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