Next-gen superjunction 650V power MOSFETs announced
The first device in the DTMOS VI series is the TK040N65Z, a 650V enhancement mode MOSFET that supports continuous drain currents (ID) up to 57A and 228A when pulsed (IDP). The new device has a low drain-source on-resistance RDS(ON) of 0.04Ω (0.033Ω typ.), reducing losses in power designs. The enhancement mode device is ideal for use in modern high-speed power supplies, due to the reduced capacitance in the design.
Power supply efficiency is improved as a result of reductions in the key performance index / figure-of-merit (FoM) – RDS(ON) x Qgd. The TK040N65Z shows a 40% improvement in this metric over the previous DTMOS IV-H device, which represents a significant gain in power supply efficiency in the region of 0.36% – as measured in a 2.5kW PFC circuit.
The new device is housed in an industry-standard TO-247 package, ensuring compatibility with legacy designs as well as suitability for new projects. Toshiba will continue to expand their product lineup to meet market trends and help improve the efficiency of power supplies and systems.
The new device enters mass production today and shipments begin immediately.
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