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Next generation CMOS image sensor for extreme low light conditions

Next generation CMOS image sensor for extreme low light conditions

Technology News |
By Nick Flaherty



Teledyne e2v in France has launched its next generation of 1.3Mpixel low light CMOS image sensor.

The OnyxMax CMOS image sensor has been designed by Teledyne e2v in Grenoble for extremely low light conditions, down to 1 mLux. This uses Teledyne’s new HiRho proprietary pixel technology, which enables Near Infrared (NIR) sensitivity and spatial resolution with Quantum Efficiency (QE) of 58% and MTF of 63% at 850nm wavelength.

The 1.3 Megapixels (1,280 x 1,024) OnyxMax sensor array is available in monochrome as standard, and with colour filter array (CFA) arrangements available on request.

The 10 x 10 µm pixel provides a signal to noise ratio (SNR) of 10 dB at less than 2 mLux and at 60 frames per second and operates in rolling and global shutter modes, providing 75 dB of linear dynamic range. It also has a patented on-chip HDR mode which is capable of handling scene dynamics up to 100 dB.

The combination of sensitivity and image resolution increases its range for applications such as research, astronomy, defence, traffic cameras, broadcast and surveillance.

Ariane Le Bon, Marketing Manager for Low Noise Imaging, at Teledyne e2v said, “We are very proud to release OnyxMax, which has been specifically designed to deliver high-performance in challenging low light conditions. This sensor performs significantly better than general purpose image sensors that generally lose contrast in the NIR. OnyxMax performs impressively in these conditions and has been very well received by defense, commercial, and scientific markets.”

Documentation and samples are available now upon request.

www.imaging.teledyne-e2v.com

 

 

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