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Next generation SiC MOSFETs and diodes for industrial and automotive markets

Next generation SiC MOSFETs and diodes for industrial and automotive markets

New Products |
By Nick Flaherty



The 40 mOhm MSC040SMA120B MOSFET is highly avalanche-rated for industrial, automotive and commercial aviation power applications, and offers a high short circuit withstand rating for robust operation. Additional members of the product family will be released in the coming months, including commercially and AEC-Q101 qualified 700 V and 1200 V SiC MOSFET solutions to address a wide range of power applications which can leverage Microsemi’s newly released SiC SBDs.

“Our new SiC MOSFET product family provides customers with the benefits of more efficient switching and high reliability, particularly in comparison to Silicon diodes, Silicon MOSFETs and Insulated Gate Bipolar Transistor (IGBT) solutions,” said Leon Gross, vice president and business unit manager for Microsemi’s Power Discretes and Modules business unit. “Customers focused on developing cost-effective power electronics solutions for rugged environments can select their ideal solutions from these next-generation offerings, with the ability to scale to their specific SiC MOSFET needs.”

The SiC MOSFETs and SiC SBDs are designed with high repetitive unclamped inductive switching (UIS) capability at rated current, with no degradation or failures, a high UIS capability at approximately 10-15 Joule per square centimeter (J/cm2) and robust short circuit protection at 3-5 microseconds . The SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss and can be paired withthe MOSFETs for use in modules.

The MOSFETs and SBDs are aimed at a wide range of applications within the industrial  and automotive markets, and its SiC MOSFETs can also be used in switch mode power supply and motor control applications within the medical, aerospace, defense and data center markets. Examples include hybrid electric vehicle (HEV)/EV charging, conductive/inductive onboard charging (OBC), DC-DC converters, EV powertrain/tractional control, switch mode power supply, photovoltaic (PV) inverters, motor control and actuation for aviation. Integration of SiC devices in on-board charging and DC-to-DC power conversion systems enable higher switching frequency and lower losses. IndustryARC expects the SiC market in EV charging to witness a growth rate of approximately 33 percent until 2024.

The SiC MOSFETs offer 10 times lower failure-in-time (FIT) rate than comparable Si IGBTs at rated voltages with regard to neutron susceptibility and the SBDs complement its SiC MOSFET robustness with UIS ratings 20 percent higher than competitor parts, as well as 25-50 percent power output increases for the same physical dimensions, efficiency at higher switching frequencies over IGBTs, reduced system size and weight, operating stability over temperature (+175 degrees C) and significant cooling cost savings. 

The MSC040SMA120B is sampling now, and its complementary SiC SBDs are available in full production.

www.microsemi.com/product-directory/mosfet/3539-sic-mosfet 

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