Nitronex qualifies power transistor to deliver reliability benefits
The thermal resistance of the NPT1015 transistor is 1.9°C/W, which is among the lowest in the industry in this power class. This GaN technology is capable of surviving the industry’s most severe robustness tests without significant device degradation.
Developed under an entirely new design process, the NPT1015 uses Nitronex’s existing 28 V NRF1 process platform, which has been in volume production since 2009. One hundred NPT1015 devices from four wafers were subjected to a 15:1 VSWR at all phase angles with 90°C base plate temperature. During VSWR testing, all devices operated in a saturated average power condition driven by a 4000 carrier 200 MHz wideband signal with a 19.5 dB peak-to-average ratio. The devices showed 100% survivability and only ~0.2 dB average change in saturated output power.
Nitronex’s patented SIGANTIC GaN-on-Si process is the only production-qualified GaN process using an industry standard 4 inch silicon substrate. This results in a robust, scalable supply chain and positions Nitronex well for the growth expected from emerging GaN markets such as military communications, broadband, RADAR, commercial wireless, satellite communications and point to point microwave.
Availability
Fully-qualified NPT1015 transistors are now available from stock to 12 weeks, and can be purchased through the Nitronex sales channel and distribution.
Visit Nitronex at www.nitronex.com
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