Nonlinear RF Model Library for advanced design system with Mitsubishi Electric’s GaAs and GaN RF devices
The new ADS model library includes high-power GaN HEMT and low-noise HEMT devices commonly used in base station and direct-broadcast satellite receivers as well as other radio communications equipment. The library helps designers better explore design alternatives in order to meet demanding performance specifications with a cost-effective solution. The library includes an ADS symbol for schematic capture, a simulation model that includes parasitic effects. It also covers a broad variety of body sizes and part values that enable sweeps and optimizations. Customers can also generate X-parameter models of their circuit-level designs directly from ADS. X-parameters provide fast and accurate behavioural modelling. These capabilities are vital to designing high-performance RF modules and RF system-in-package components.
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