Norstel partners Ascatron to address SiC epitaxy solutions
Both Norstel and Ascatron are already providing SiC epitaxy to the power electronic industry, but by utilizing and sharing their respective expertise, equipment and capabilities, the two companies expect to strengthen their businesses. Another reason for the cooperation is sharpened demand for high performance epitaxy in terms of layer thickness, advanced structures and higher quality, all driven by semiconductor device manufacturers targeting higher voltages, new device types and generally better yield in device fabrication.
Norstel’s core offering is focused on SiC crystal growth and high quality SiC wafers including epitaxy for volume production. Ascatron’s specialty is customized SiC epitaxy and device design.
“By combining the proven epitaxy production capacity of Norstel with our experience of advanced material we will be able to serve all type of SiC epitaxy needs. From serial production of low defect epi for Schottkys and MOSFETs, to R&D prototyping of thick epi with our unique buffer technology for future bipolar devices like IGBTs,” explained Christian Vieider, CEO of Ascatron.
Per Zellman, acting CEO of Norstel, said: "The companies have complementary capabilities and we are already cooperating successfully in projects like the EU project SPEED for new generations of high-power semiconductor devices.”
The new constellation provides SiC epitaxial layers with both n- and p-doping up to 250 um thickness on wafers with diameters up to 100 mm. Also 150 mm wafers will be supported within short.
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