Nujira claims breakthrough LTE performance for CMOS PAs
Traditional CMOS PAs suffer from low inherent linearity, limiting their application to low cost 2G and 3G devices. ET removes this limitation and boosts the linearity, efficiency and output power for CMOS PAs beyond the performance of today’s Gallium Arsenide (GaAs) PAs, even for high linearity LTE signals.
Extensive lab testing by Nujira has shown that the combination of Nujira’s ET power modulators and a prototype CMOS PA device achieves the performance required for 4G. The key metrics achieved were 57% efficiency, 28 dBm average output power, and -38dB ACLR, with a high peak-to-average power ratio LTE signal.
The high end performance results have been made possible by Nujira’s patented ISOGAIN Linearization. ISOGAIN removes the need for Digital Pre Distortion in CMOS PAs and linearizes the PA at no extra cost, power or complexity, while keeping the device in a highly efficient compressed state across a wide power control range.
By demonstrating the potential for high end applications of CMOS PAs, Nujira claims to have opened the door for what is set to be a disruptive technology shift in the RF market.
Tim Haynes, CEO of Nujira commented: “The exploding complexity of the RF front-end in today’s smartphones is driving unprecedented rates of change in the component industry. Our test results are a significant breakthrough, demonstrating that CMOS PAs can also be used in high-end 3G/4G smartphone applications. The combination of CMOS PAs with Nujira’s patented ET architectures could ultimately signal the death of the GaAs industry for handset applications. In the longer term, these results open the door for further CMOS integration, enabling a highly integrated RF front-end architecture for complex multi-mode, multi-band handsets.”
Visit Nujira at www.nujira.com
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