nVerPix wins SID prototype award, makes OLEDs brighter
In a 2011 paper, Rinzler was demonstrating an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colours. The breakthrough was supported by the use of a single-wall carbon nanotube (SWCNT) network source electrode allowing the integration of the drive transistor and the light emitter into a single stacked device, exhibiting a performance comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.
Since then, the company has been refining its technology and at SID DisplayWeek 2016, it was exhibiting for the first time a QVGA (320×240) display prototype built with these CNT-enabled vertical organic light emitting transistor (CN-VOLET). It won the “Best Prototype” award with its 6.4cm diagonal monochrome display.
Because the drive transistor is incorporated into the device it does not take up any additional pixel area but instead reduces the pixel circuit of the conventional AMOLED display to two discrete components: the switching transistor and the CN-VOLET. Hence the emitter makes up more of the pixel area, achieving a higher display brightness or alternatively the same brightness at a much lower current density, extend the overall OLED lifetime. This permits high aperture ratio bottom emission displays, as high as 70%, the founders explain. This simplified architecture also greatly simplifies the manufacturing of OLED backplanes.
Visit nVerpix at www.nverpix.com
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
