NXP partners with Raaam for SRAM replacement
IP licensing startup Raaam Memory Technologies Ltd. (Petah Tikva, Israel) has announced it is in a collaboration with NXP Semiconductors concerning its CMOS-compatible embedded DRAM.
Raaam calls the technology Gain-Cell Random Access Memory (GCRAM) and claims it can provide a 50 percent area saving versus SRAM and consume 10 percent of the power of SRAM. The company had already revealed that it had signed a major fabless chip company and customer of foundry TSMC as its lead partner, but had not revealed the identity.
The memory is a form of DRAM that is compatible with standard CMOS manufacturing processes. It performs in a similar fashion to SRAM but occupies about half the area and can save considerable power by avoiding off-chip calls to external caches.
“Fifty percent or more of SoC die areas can consist of embedded SRAM. However, in advanced process nodes, SRAM scaling limitations can challenge power and performance,” said Victor Wang, vice president of front-end innovation at NXP, in a statement issued by Raaam. “The potential benefits of Raaam’s technology for area reduction can help increase the density in future NXP memory solutions,” Wang said.
Raaam signs lead licensee for SRAM replacement technology
“This collaboration with NXP is a vote of confidence and a significant milestone for Raaam,” said Robert Giterman, Raaam co-founder and CEO, in the same statement. “We are confident that future NXP products using our technology will bring additional competitive edge to the market.”
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