NXP releases new 25-V and 30-V high-performance N-channel, logic-level MOSFETs
New Products
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By
eeNews Europe
While traditional approaches focus primarily on reducing RDS(on) and Qg, NXP NextPower uses superjunction technology to optimize the balance between low RDS(on), low Qoss, low Qg(tot) and Qgd for strong switching performance and reduced losses between output drain and source terminals, as well as superior SOA performance. In addition, NXP LFPAK, the toughest Power-SO8, delivers rugged power switching in a compact, 5 mm x 6 mm footprint.
The NXP NextPower range of 25 V and 30 V MOSFETs deliver strong all-around performance in the following six parameters:
- Low RDS(on) – the industry’s lowest RDS(on) Power-SO8 – providing low I2R losses and superior performance when used in SYNC FET or power OR-ing applications
- Low Qoss for reduced losses between DRAIN and SOURCE, reducing wasted energy stored in the output capacitance (Coss) when voltage changes across output terminals
- Low Miller charge (Qgd) for reduced switching losses and high-frequency switching
- SOA performance providing tolerance to overload and fault conditions
- Low gate charge (Qg) for reduced losses in the gate drive circuit
- Superior junction temperature rating, Tj(max), with LFPAK, the rugged Power-SO8 package for demanding environments where high reliability is required.
Key applications include synchronous buck regulators, DC-DC conversion, voltage regulator modules and power OR-ing
Visit NXP Semiconductors at www.nxp.com.
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