NXP targets Airfast-3 RF power transistors at smart cities
The latest Airfast 3 technology raises the bar in technology and meets the stringent requirements of all current wireless standards with wide instantaneous bandwidths to cover an entire cellular band using a single device. Airfast 3 delivers industry-leading performance in key areas that include efficiency, gain, RF output power, and signal bandwidth, while significantly reducing the footprint required to deliver a given level of RF output power.
When compared to Airfast 2, this third generation delivers up to four percent greater efficiency (53 percent final-stage efficiency and up to 50 percent lineup efficiency), a 20 percent improvement in thermal performance, up to 90 MHz full-signal bandwidth, and space savings up to 30 percent.
“Continued advancement of RF power amplifiers is needed to reduce the size of cellular base stations,” said Paul Hart, Executive Vice President and General Manager of NXP’s RF Power business unit. “Our third generation of Airfast solutions provide industry leading performance in the form factor needed to drive the industry forward.”
The four new Airfast 3 LDMOS RF power transistors designed for asymmetrical Doherty amplifier architectures include:
- A3T18H450W23S: 1805 to 1880 MHz, 89 W average RF output power, 17.2 dB gain, 51% efficiency
- A3T18H360W23S: 1805 to 1880 MHz, 56 W average RF output power, 17.5 dB gain, 53% efficiency
- A3T21H450W23S: 2110 to 2200 MHz, 89 W average RF output power, 15.5 dB gain, 49.5% efficiency
- A3T26H200W24S: 2496 to 2690 MHz, 37 W average RF output power, 16.3 dB gain, 50% efficiency
These transistors are the first Airfast products to be housed in air-cavity plastic packages that combine exceptional RF performance with a lower thermal resistance reducing overall system heat dissipation.
The Airfast 3 RF power transistors are currently sampling with production expected starting in Q4 2016. Reference circuits for various frequencies are also available.
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