NXP upgrades UK power fab to GaN with government backing

NXP upgrades UK power fab to GaN with government backing

Business news |
By eeNews Europe

Up to £2m funding will come from the UK government’s Regional Growth Fund (RGF), alongside a private sector investment of over £7.5 million. The UK investment is intended to safeguard over 400 existing jobs and create up to 100 new positions at the Hazel Grove fab and aims to establish the UK as a global research hub for NXP in GaN.
NXP Semiconductors UK successfully bid for funding to develop its next generation of power semiconductors using GaN and is saying that eventually it could replace traditional silicon components in power electronic systems such as used in car systems, mobile phones and communications infrastructure as well as cloud computing.
The funding has been awarded as part of the third round of the Regional Growth Fund and will be used to recruit extra research and development staff, make prototype models, consult the UK’s leading academics and provide equipment for the development phase. It will support NXP’s investment to create a leading center for power semiconductors in its Manchester facility, as well as local businesses and suppliers.
“I’m very pleased that money from the Regional Growth Fund is supporting the world-leading GaN research facility in Stockport which is a great boost for the local area, supporting a huge private sector investment and local jobs," said Chief Secretary to the Treasury, Danny Alexander. “The Regional Growth Fund gives us the opportunity to drive forward innovative projects like this and shows we are doing everything we can to boost growth and the position of the UK as a global leader in science and innovative technology.”

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