Odyssey readies 1200V vertical GaN to take on SiC
Odyssey Semiconductor Technologies is building samples of vertical gallium nitride (GaN) FET transistors in the US that operate at 650V and 1200V.
Product samples of the devices for customer evaluation are planned for Q4 2022. The move is significant as there are several 1200V vertical GaN projects around the world, with imec and Bosch in Europe working on the technology and Enkris in China producing 300mm epiwafers suitable for such devices.
The vertical structure will provide lower on-resistance and higher figure-of-merit for both the 650 and 1200 volt devices, says the company, with an on resistance a tenth that of silicon carbide (SiC) and significantly higher frequency operation.
It says it has secured commitments from three customers to evaluate these first generation product samples. It is looking at further customer engagement for the product samples.
Other 1200V GaN projects
- 1200V GaN breakthrough at imec takes on SiC
- 1200V GaN FET for 99% efficiency
- UK project to develop vertical GaN devices
- Bosch to develop 1200V GaN process for automotive
- 1200V GaN on 300mm wafers takes on SiC
“The importance of Odyssey achieving this milestone of 1200 volt vertical GaN power devices cannot be over-emphasized,” said Mark Davidson, CEO of Odyssey’s Chief Executive Officer. “We are emerging from process and materials R&D to delivering products at voltages that lateral GaN can’t practically reach with economics unattainable by silicon and silicon carbide. Our vertical GaN products will deliver high power conversion efficiency at almost 10x smaller than a silicon carbide transistor for the same application.”
“We are not just fabricating test structures. We’re building product samples that customers need. Odyssey continues to close new commitments for product samples as customers gain a full understanding of the capabilities of Odyssey’s power devices. The Company is uniquely positioned with the expertise and the IP portfolio to protect it. And with our own foundry in Ithaca, New York, we can innovate quickly and control our ability to supply products to customers,” he said.
Odyssey says its approach to vertical GaN will offer an even greater improvement that silicon, silicon carbide, and lateral GaN cannot deliver. The 650 volt is the larger market today, expected to grow at a 20% compound annual growth rate. The 1200 volt product market segment is expected to grow faster at 63% CAGR and will become the larger market in the second half of this decade.
Together, the 650 and 1200 volt power device market is expected to grow to approximately $5 billion in 2027, a 40% combined CAGR according to Yole, a French company that gathers market statistics.
Related 1200V SiC articles
- 1200V SiC MOSFETs for industrial power conversion
- 1200V SiC MOSFETs cut on resistance
- Coherent qualifies its 1200V SiC MOSFET
- 1200V SiC MOSFET cuts on resistance
Other articles on eeNews Power
- Infineon signs 200mm SiC wafer deal with Coherent
- Danfoss completes takeover of power expert Semikron
- French pilot plant for solid state battery materials, rare earths
- onsemi $450m boost to European silicon carbide wafer plant
- Coherent signs $100m SiC wafer deal
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
