Osram achieves 7.5% more efficacy from high-power LEDs
The development was made possible by applying optimized epitaxial processes. At a current density of 3 A/mm² the quantum efficiency of the LEDs is now 7.5 percent above the previous level.
The unwanted drop in efficiency as the current density increases, commonly referred to as ‘droop’, limits the maximum luminous efficacy of indium gallium nitride based LEDs and is the subject of research and development activities worldwide. Engineers at Osram Opto Semiconductors have been able to reduce this effect to achieve an increase in the efficiency of the LEDs. Under laboratory conditions and at a current density of 3 A/mm² a typical luminous flux of 740 lm was verified in a QFN LED package (Quad Flat No Lead) – an improvement of around 7.5 percent compared with previous typical values (6200 K, Cx 0.319, Cy 0.323, single-chip version LDxyz). At low current densities of 0.35 A/mm² the benefit of the optimized LEDs is still around four percent.
The new processes are being used in all LEDs from Osram Opto Semiconductors based on UX:3 chip technology and will also have a positive impact on other high-power products. The results will now be integrated step by step in the company’s existing product portfolio.
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