Output array with DMOS FET can replace Darlington transistors
The TBD62183AFNG and TBD62183AFWG are aimed at level shift applications and for directly controlling photocouplers, LEDs, and relays that require high-voltage input signals and can replace Darlington bipolar devices.
The devices provide high-voltage drive capabilities with an input rating of 30V and output rating of 50V. An 8-channel sink type output is incorporated into the small SMD packages, enabling reduced component count for the control of multiple circuits. In addition, the TBD62083A-series has an output current (IOUT) of 500mA per channel while the TBD2183A-series is designed for low power applications with a maximum IOUT of 50mA per channel.
By adopting a DMOS FET type output, the two new transistor arrays eliminate the need for a base current for the input pin. The devices achieve operation with a low maximum input current of 0.1mA at 3 V, while delivering very low power consumption. They also have output characteristics similar to the Vce (sat) properties of a Darlington Bipolar transistor, making them suitable for replacing in-line bipolar transistors in Toshiba’s TD62083A series.
The TBD62183AFNG is housed in an SSOP18 package and the TBD62183AFWG is in a SOL18 package. Target applications include white goods such as refridgerators and coffee machines, battery chargers, video surveillance systems, LED displays and industrial equipment such as welding machines.
For more information visit TEE’s web site at www.toshiba.semicon-storage.com.
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