P-channel power MOSFETs offer industry-low RDS(on) in small footprint PowerPAK packages
Designed to increase power efficiency in mobile computing and industrial control devices, the Vishay Siliconix MOSFETs feature the industry’s lowest on-resistance for -12 V and -20 V devices at -4.5 V and -2.5 V gate drives in the 3.0 mm by 1.9 mm and 3.3 mm by 3.3 mm footprint areas.
The Si5411EDU, Si5415AEDU, and SiSS23DN are optimized for load, battery, and supervisory switches in a wide range of applications, including power management in smartphones, tablets, notebooks, industrial sensors, and POL modules. The devices’ industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.
In applications where saving PCB space is critical, the -12 V Si5411EDU offers low on-resistance of 8.2 mO (-4.5 V) and 11.7 mO (-2.5 V) in the 3.0 mm by 1.9 mm PowerPAK ChipFET package. When a higher voltage rating is needed, the -20 V Si5415AEDU features values of 9.6 mO (-4.5 V) and 13.2 mO (-2.5 V). Both devices provide typical ESD protection of 5000 V. For applications requiring extremely low on-resistance, the SiSS23DN provides values of 4.5 mO (-4.5 V) and 6.3 mO (-2.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8S package with a low 0.75 mm profile.
The Si5411EDU, Si5415AEDU, and SiSS23DN are 100 % Rg- and UIS-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
Vishay’s p-channel Gen III family now includes more than 60 devices in footprints ranging from 5 mm by 6 mm down to 0.8 mm by 0.8 mm.
Availability
Samples and production quantities of the new p-channel MOSFETs are available now, with lead times of 13 weeks for larger orders.
More information about the p-channel MOSFETs at
www.vishay.com/doc?62879 (Si5411EDU)
www.vishay.com/doc?62889 (Si5415AEDU)
www.vishay.com/doc?62852 (SiSS23DN)
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