P-type semiconducting perovskite for next-generation displays
A research team at POSTECH (Pohang University of Science and Technology) has developed a groundbreaking novel p-type semiconducting perovskite material for next-generation displays and electronic devices.
N-type transistors generally demonstrate superior performance — however, to achieve high-speed computing with low power consumption, p-type transistors must also attain comparable efficiency. To address this challenge, the research team focused on a novel p-type semiconducting tin-based perovskite material with a unique crystal structure. This material is a promising candidate for high-performance p-type transistors in displays and electronic devices. However, it has only been fabricated through a solution process, a technique similar to soaking ink into paper. This process suffers from scalability and quality consistency challenges.
In a significant breakthrough, the team successfully applied thermal evaporation, a process widely used across industries such as OLED TV and semiconductor chip manufacturing, to produce high-quality caesium-tin-iodide (CsSnI3) semiconductor layers.
Furthermore, by adding a small amount of lead chloride (PbCl2), the researchers improved the uniformity and crystallinity of the perovskite thin films. The resulting transistors exhibited outstanding performance, achieving a hole mobility of over 30 cm2/V·s and an on/off current ratio of 108, which is comparable to already commercialised n-type oxide semiconductors—indicating rapid signal processing and low power consumption during switching.
This innovation enhances device stability and enables the fabrication of large-area device arrays, effectively overcoming two significant limitations of previous solution-based methods. Importantly, the technology is compatible with existing manufacturing equipment used in OLED display production, presenting significant potential to reduce costs and streamline fabrication processes.
“This technology opens up exciting possibilities for the commercialisation of ultra-thin, flexible, and high-resolution displays in smartphones, TVs, vertically stacked integrated circuits and even wearable electronics because of a low processing temperature below 300 ℃,” said lead researcher Professor Yong-Young Noh from the Department of Chemical Engineering at POSTECH.
The research was supported by the National Research Foundation of Korea (NRF) under the Mid-Career Researcher Program, the National Semiconductor Laboratory Core Technology Development Project, and Samsung Display.
https://doi.org/10.1038/s41928-025-01380-8
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