Peregrine’s UltraCMOS 10 extends SOI for RF IC design
UltraCMOS 10 RF SOI (silicon on insulator) technology delivers both flexibility and performance for RF front-end design, with a claimed greater-than-50% performance improvement over comparable solutions. At 130 nm dimensions, the technology delivers the support needed for the latest generation of LTE-Advanced smartphones and, for the first time, will allow the company to deliver cost-competitive products for 3G smartphones.
The base material – wafers of silicon-on-insulator – come from Soitec, and diffusion is at GlobalFoundries, who commented, “…we co-developed a custom flow to help make Peregrine’s new UltraCMOS 10 generation a truly cutting-edge advance in RF SOI.”
Peregrine says that the UltraCMOS 10 130 nm generation delivers the industry’s best RON.COFF performance and enables improved performance and scaling. The RON COFF figure of merit is a ratio of how much loss occurs when a signal goes through a switch in its ON state (RON, or on-resistance) and how much the radio signal leaks through the capacitor in its OFF state (COFF, or off capacitance). The RON COFF performance metric for UltraCMOS 10 technology is 113 fsec. This is a five-fold improvement over the first generation released by Peregrine 10 years ago. Methodologies and materials have lowered insertion loss without sacrificing isolation performance. In addition to improved RON COFF performance, UltraCMOS 10 platform uses Peregrine’s design technology, which delivers linearity of more than 75 dBm at 900 MHz and equates to higher data rates and improved co-existence for consumers.
Peregrine Semiconductor; www.psemi.com
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