Photorelays take drive currents up to 3A
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By
eeNews Europe
The devices rely on Toshiba’s latest trench MOSFET structure, 8th generation UMOS, to realize output currents exceeding 1A. Both devices offer an isolation voltage of 2500 Vrms and low values of on-resistance (TLP3823 60mΩ typ., TLP3825 250mΩ typ.) to ensure efficient operation. The rapid turn-on and turn-off times allow the photorelays to be used in fast switching applications. The required triggering current is below 5mA for both devices and, when off, the devices have a leakage current of less than 1μA.
Toshiba’s new devices offer a guaranteed pulsed ON-state current that is three times larger than the continuous ON-state current, securing a bigger margin for safety design.
Toshiba Electronics Europe – www.toshiba.semicon-storage.com
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