Pioneer respins STT-MRAM process for industrial and IoT
The MRAM process is being altered to deliver rugged attributes required by industrial applications at densities of 8Mbit to 256Mbit and compatibility with serial-toggle MRAM, nvSRAM, ferroelectric RAM and NOR-flash.
Over the -40 to 85C operating temperature range the devices will show SRAM-like performance with low latency and high bandwidth.They will provide standard JEDEC serial interfaces (SPI, QSPI, OSPI, xSPI).
The Industrial/IoT STT-MRAM is currently in development on the same 28nm lithography platform as Everspin’s 1Gbit STT-MRAM and will be sampling in the second half of next year. Everspin has previously used Globalfoundries as its manufacturer.
Related links and articles:
News articles:
Embedded MRAM available on 22nm FDSOI
MRAM pioneer Everspin restructures, lays off staff
Everspin pulls back on 1Gbit MRAM
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