Plessey expands GaN-on-Silicon LED production capabilities
The Close Coupled Showerhead system recently delivered with a 7×6-inch configuration will supplement an existing production system from AIXTRON.
Dr. Keith Strickland, Chief Technology Officer for Plessey said: “Our MaGIC (Manufactured on GaN-on-Si I/C) LED product in particular has been successfully launched this past year. As a result, we now plan to step up our production. To this end, and given our positive experience with AIXTRON’s CRIUS II-XL system, we have purchased a further system of this type and are thus maintaining our successful cooperation with AIXTRON.”
“CRIUS II-XL convinced us with its high throughput rates and low operating costs for GaN layer growth on 6-inch silicon substrates. Moreover, AIXTRON is actively supporting us in further optimizing our production processes,” added Mike Snaith, Operations Director for Plessey.
Dr. Frank Schulte, Vice President AIXTRON Europe. “The order offers further confirmation that Gallium Nitride-on-Silicon, a high-performance, efficient epitaxy process, is becoming increasingly established as an alternative to growth on sapphire. The associated potential production cost savings will further promote the establishment of LED as a light source. AIXTRON is well prepared for this market development and will also be supporting Plessey in further optimizing its GaN-on-Silicon technology.”
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