Plessey gears up its GaN-on-Si microLED manufacturing capacity with new equipment
With an automatic cassette-to-cassette (C2C) wafer transfer module, the new Aixtron reactor will be installed and operational during Q1 of 2019 at Plessey’s 270,000 sq ft fabrication facility located in Plymouth, UK.
The AIX G5+ C MOCVD system has two separate chamber set-up options, which enables configurations of 8 x 6in or 5 x 8in GaN-on-Si wafers to be automatically loaded and removed from the system in an enclosed cassette environment. The system will be an addition to the company’s existing metal organic chemical vapour deposition (MOCVD) reactors, also supplied by Aixtron, which provide configurations of 7 x 6in or 3 x 8in with manual loading.
Productivity will be further enhanced by the new reactor’s automated self-cleaning technology, which helps to deliver a very low level of wafer defects by ensuring the reactor is clean on every run, significantly reducing downtime for maintenance.
The new equipment also provides faster ramp and cool down along with a high susceptor unload temperature to reduce the recipe time.
The AIX G5+ C reactor will support Plessey’s extensive production roadmap to increase R&D capacity of its monolithic microLEDs based on its proprietary GaN-on-Si technology.
“Our continued and valuable relationship with Aixtron allows Plessey to rapidly bring to market its monolithic microLEDs. To help us achieve this, our latest acquisition of AIX G5+ C planetary system combines outstanding on-wafer uniformity and run-to-run performance at the lowest cost of ownership – aspects that are critical for efficient high-volume GaN-on-Silicon microLED displays”, explained Mike Snaith, Chief Operating Officer at Plessey.
Plessey – www.plesseysemiconductors.com
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