Plessey is first in the world to release GaN on silicon LEDs on 6-inch GaN on silicon substrates
Plessey is using the company’s proprietary large diameter GaN on silicon process technology to manufacture the LEDs on its 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility. The use of Plessey’s MAGIC GaN line using standard semiconductor manufacturing processing provides yield entitlements of greater than 95% and fast processing times providing a significant cost advantage over sapphire and silicon carbide based solutions for LEDs of similar quality.
The release of the availability of Plessey’s GaN on silicon LEDs coincided with a visit to the Plessey Plymouth facility by the Rt. Hon. Dr. Vince Cable, MP, Secretary of State for Business Innovation and Skills and President of the UK’s Board of Trade. Business Secretary Vince Cable commented, “The government is supporting innovative companies like Plessey who are growing, creating jobs and exporting their products all over the world. That’s why we selected Plessey’s £3.25 million Regional Growth Fund bid for Government support, which will create 100 new, high tech and highly skilled jobs in the region.”
“Today is a significant step for us”, said Barry Dennington, Plessey’s COO. “From acquiring our first MOCVD reactor in August 2012 to having our first product in April 2013 is excellent progress. These entry level products will be used in indicating and accent lighting applications. We will continue to make progress in output efficiency and are on plan to release further improvements in light output throughout this year and into next. The operating and unit costs are on plan and we are seeing a number of routes to enhance our cost advantage over competing technologies.”
Caption: (L to R) Michael LeGoff, Plessey Semiconductors CEO and Dr. Vince Cable, MP Secretary of State for Business Innovation and Skills and President of the UK’s Board of Trade.
Visit Plessey at www.plesseysemi.com
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