Plessey orders laser dicing system from ALSI to produce GaN-on-Silicon LEDs
Dr. Keith Strickland, Chief Technology Officer at Plessey said: “An essential process step to achieve our cost and LED performance targets is the singulation of the finished wafer into LED dies. ALSI demonstrated their experience in dicing and proved in short turnaround time to be able to meet our challenging process, cost and delivery requirements. ALSI’s multi-beam process will be key to the back-end processes to be included in the fabrication line in Plymouth.”
Rene Hendriks, director of Commerce of ALSI said: “Plessey has introduced and started to commercialize new GaN-on-Si LEDs and we are very pleased that Plessey selected our system to support the roadmap for lowering the cost of LEDs. Once more the multi-beam demonstrated to be able to dice wafers with high
productivity while requiring very narrow dicing streets allowing high wafer yield for such small devices on very fragile base material”.
In 2013 Plessey launched the company’s next generation of GaN-on-Silicon mid-power LEDs, doubling the efficiency over the first generation devices for an entry level lighting range.
Plessey has started to commercialize low cost High Brightness LED products and also plans to develop a range of smart-lighting products that incorporate Plessey’s existing sensing and control technologies.
Visit Advanced Laser Separation International at www.alsi-international.com
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