Plessey starts transition to 8-inch GaN-on-Silicon production
The project aims to accelerate high volume manufacturing of Plessey’s innovative LEDs created with GaN-on-Silicon technology at the company’s Devon based manufacturing site.
"This project supports the work we have ongoing with AIXTRON and Bruker to further increase the yield of our GaN-on-Silicon process. These improvements are required as part of our move to 200 mm (8-inch) silicon substrates. A 200 mm (8-inch) wafer has almost twice the usable area of our existing 150 mm (6-inch) wafers and therefore will almost double the number of LEDs produced for the same relative cost," said Dr. Keith Strickland, Plessey CTO.
Plessey’s MaGIC (Manufactured on GaN-on-Silicon I/C) High Brightness LED (HBLED) technology has won numerous awards for its innovation and ability to cut the cost of LED lighting by using standard silicon manufacturing techniques.
Related articles and links:
www.plesseysemiconductors.com
News articles:
Plessey expands in-house LED assembly line in Plymouth
Plessey unveils high-volume large GaN-on-Si LED die capability
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