Plug-and-play gate driver for HV SiC modules
To help developers implement Silicon Carbide (SiC) systems and fast-track the development process, Microchip Technology has introduced the 3.3 kV XIFM plug-and-play mSiC™ gate driver with patented Augmented Switching™ technology, which is designed to work out-of-the-box with preconfigured module settings to significantly reduce design and evaluation time.
To speed time to market, the complex development work of designing, testing and qualifying a gate driver circuit design is already completed with this plug-and-play offering. The XIFM digital gate driver is a compact product that features digital control, an integrated power supply and a robust fiber-optic interface that improves noise immunity. It has has preconfigured “turn-on/off” gate drive profiles that are tailored to optimize module performance.
The XIFM incorporates 10.2 kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions including temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT) and Negative Temperature Coefficient (NTC). It also complies with EN 50155, a key specification for railway applications.
The electrification of everything is driving the widespread adoption of SiC technology in medium-to-high-voltage applications like transportation, electric grids and heavy-duty vehicles.
“As the silicon carbide market continues to grow and push the boundaries of higher voltage, Microchip makes it easier for power system developers to adopt wide-bandgap technology with turnkey solutions like our 3.3 kV plug-and-play mSiC gate driver,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit. “By having the gate drive circuitry preconfigured, this offering can reduce design cycle time by up to 50% compared to a traditional analog solution.”
The 3.3 kV XIFM plug-and-play mSiC gate driver is now available.
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