Power FET packaging update contributes to switching-circuit efficiency
New Products
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By
Graham Prophet
This power-transistor family comprises a wide range of super-junction Power MOSFETs with integrated fast-recovery diodes and breakdown voltages up to 650V. The combination of technical parameters – low gate charge, input capacitance and resistance, fast recovery phase of the intrinsic diode, very low recovery charge (Qrr) and recovery time (Trr) and optimal soft-switching performance – place the new devices ahead of competitive offerings, ST believes. The FETs are available in multiple package/breakdown-voltage combinations, with pricing from $1.55 (1000),
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