Power MOSFET reduces on-resistance to 1.92mΩ

Power MOSFET reduces on-resistance to 1.92mΩ

New Products |
By Nick Flaherty

The XK1R9F10QB is the first device in Toshiba’s new U-MOS X-H trench MOSFET series and is manufactured using the latest semiconductor manufacturing process. The device comes in a low impedance TO-220SM(W) package and offers a rather interesting on-resistance RDS(on) of maximum 1.92mΩ at UGS = 10V. This represents an improvement (reduction) of about 20% compared to current devices like the TK160F10N1L.

The lower RDS(on) enables users to reduce power consumption and increase efficiency in automotive applications. The XK1R9F10QB also features lower switching noise due to its optimized capacitance characteristics, which reduces electromagnetic interference (EMI).

The new power MOSFET withstands a 100V drain-source voltage (UDSS) and is designed for a continuous drain current (ID) of 160 or 480A in pulsed state (IDP). The low on-strisistance allows the device to operate at channel temperatures up to 175°C and have a channel-to-chassis thermal resistance Zth(ch-c) of less than 0.4°C/W, which improves thermal performance.

The XK1R9F10QB is qualified for automotive applications according to AEC-Q101. A PSpice model is freely available to support fast simulation.

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