Power semi startup ships its 850V SuperQ tech
iDEAL Semiconductor in the US has announced general availability of its patented silicon-based SuperQ power device technology having raised $75m.
SuperQ can reduce power loss in many applications including data centres, electric vehicles, solar panels, motor drives, medical devices, and white goods. Its elevated efficiency reduces carbon footprints and allows for a more sustainable future.
The trench technology is based in silicon and uses a novel architecture record-setting resistance per unit area (RSP). Initially targeting voltages up to 850V, the technology can be used for diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistor (IGBTs) and integrated circuits (ICs).
For example, SuperQ-based 200V MOSFETs deliver 6x lower resistance than existing silicon and 1.6x lower resistance than GaN. Motor drive inverters designed with SuperQ technology can save up to 50% of power losses. The technology is manufactured using state-of-the-art CMOS equipment.
“iDEAL Semiconductor is one of the only companies focused on both process and architecture for building power devices. Our improvements in silicon rival the improvements offered by other materials, but with silicon’s manufacturability, availability, and reliability,” said Mark Granahan, CEO and co-founder of iDEAL Semiconductor.
“Through collaborations in the US with Applied Materials and Polar Semiconductor, we have unlocked previously unimaginable performance gains. Material agnostic, we address the increasing demand for power devices. With the current global push for a greener future, we are thrilled about the role we play in making products more sustainable while also showcasing what investment in America’s semiconductor industry can accomplish,” he said.
The launch comes after a $40m Series C funding round in February and more backing in April from Applied Ventures, the venture capital arm of equipment maker Applied Materials, bringing total investment to over $75 million.