Power semiconductor test system handles SiC and GaN to 3 kV
Optimized for use with the latest compound power semiconductor materials including silicon carbide (SiC) and gallium nitride (GaN), the fully integrated S540 can perform all high voltage, low voltage, and capacitance tests in a single probe touch-down.
As demand for power semiconductor devices continues to increase and as SiC and GaN are becoming more commercialized, manufacturers are adopting wafer-level testing in their production processes to optimize yields and improve profitability.
“Many fabs are using custom-built, hybrid test systems for power semiconductor testing that require manually changing test setups when moving from low voltage to high voltage tests. As you might expect, this adds process steps and slows production,” said Mike Flaherty, general manager, Keithley product line at Tektronix. “In contrast, the S540 is a complete, fully integrated solution well suited for production environments where numerous devices must be tested quickly.”
To deliver production-level performance, the S540 can perform parametric measurements on up to 48 pins without changing cables or probe card infrastructure. It can also perform transistor capacitance measurements such as Ciss, Coss, and Crss up to 3 kV, again without manual reconfiguration of test pins. Further boosting test output, the S540 offers sub-pA measurement performance and can perform fully automated, high voltage leakage current tests in <1 sec.
As a standard commercial product, the S540 offers fully traceable system specifications, safety compliance, diagnostics, and worldwide service and support, features that are often missing in home-built or custom systems. The S540 integrates semiconductor test instrumentation with both low- and high-voltage switching matrices, cabling, probe card adapters, prober drivers, and test software.
Keithley/Tektronix; www.tek.com/keithley-s540-parametric-test-system
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